Brek Electronics has developed two string inverters with a brand new composite structure, optimized for silicon carbide (SiC) parts.
“The design replaces movie capacitors with machine-mounted ceramic capacitors and makes use of planar magnetics,” an organization spokesperson mentioned. pv journal.
The US producer mentioned SiC steel oxide semiconductor subject impact transistors (MOSFETs) have 20 instances sooner switching frequency than silicon insulated-gate bipolar transistors (IGBTs). Each gadgets have energy outputs of 200 kW and 400 kW. The SiC parts present the 400 kW inverter with an influence density of 4 kW/kg, in keeping with the corporate.
The Brek IS400 measures 762 mm x 381 mm x 635 mm. Brek estimated its weight at 100 kg, however famous that some components had been lacking from the calculation. The machine has an effectivity of as much as 99%. It has a DC energy voltage from 875 V to 1,500 V and an ambient working temperature from -40 C to 60 C.
The IS200 machine has the identical effectivity and working temperature, however measures 381 mm x 381 mm x 635 mm and weighs 50 kg. It has one most energy level monitoring (MPPT) enter, whereas the IS400 has two. The utmost enter present DC per MPPT is 222 A.
Berk claims that IS400 has a lifetime of about 15 years, with lab assessments reportedly exhibiting an enchancment in present to failure in comparison with standard silicon. It’s mentioned to submit the inverter for UL testing within the fourth quarter of 2023. It’s anticipated to be launched within the first half of 2024.
The silicon carbide-based composite structure expertise for string inverters is among the finalists of the US Nationwide Renewable Vitality Laboratory’s (NREL) American-Made Photo voltaic Prize. Silicon carbide based mostly inverters are identified to have greater energy density and decrease complete system value than conventional inverters. Nonetheless, interface defects between the silicon carbide and the insulating silicon dioxide materials are nonetheless points for such gadgets.
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