A world analysis group led by the Longi Central R&D Institute revealed a paper describing Longi’s heterojunction photo voltaic cell based mostly on a full-size silicon wafer that made a sensation final November, as a result of it beat the long-standing effectivity report held by the Japanese producer Kaneka for a few years. . The researchers attribute the development in cell effectivity to the implementation of a p-type amorphous silicon hydrogenated layer together with a modified clear conductive oxides contact, which they are saying reduces the resistivity of the cell contact.
In November final 12 months, Chinese language module maker Longi introduced that an unspecified heterojunction (HJT) photo voltaic cell based mostly on a full-size silicon wafer achieved a world record-breaking energy conversion effectivity of 26.81% in mass manufacturing. , claiming that the end result was confirmed by Germany’s Institute for Photo voltaic Vitality Analysis Hamelin (ISFH).
This end result was reported as a defeat the report achieved by the Japanese chemical firm Kaneka. The 180 cm² crystalline silicon machine, which options heterojunction and back-contact expertise, achieves 26.63% effectivity.
“We can’t disclose whether or not the cell is n-type or p-type at this stage,” a Longi spokesman stated. pv journal at the moment. Now, nonetheless, a world analysis group led by the Longi Central R&D Institute has determined to current the photo voltaic cell within the paper “Silicon heterojunction photo voltaic cells with as much as 26.81% effectivity achieved by way of electrical -optimized nanocrystalline-silicon gap contact layers,” revealed in nature’s energy.
The group constructed the M6-sized cell with clear conductive oxides (TCO) contact, a p-type amorphous silicon hydrogenated (p-nc-Si:H) layer, a nanocrystalline silicon layer, a pa-Si:H layer, an n-type crystalline silicon absorber, a ia-Si:H layer, passivating contacts (CSPCs) fabricated from hydrogenated silicon monoxide (SiOx:H), silver (Ag) high electrodes, and an anti-reflective coating based mostly on magnesium fluoride (MgF2).
The machine achieved an influence conversion effectivity of 26.81%, an open-circuit voltage of 751.4 mV, a short-circuit present of 41.45 mA cm.−2and a fill issue of 86.07%.
“The implementation of p-nc-Si:H along with the matched TCO results in a dramatic discount within the contact resistance of the again aspect, leading to a rise in effectivity,” they additional defined, noting that it that cell configuration additionally will increase the cost service. transport and low contact resistance. “Cells endowed with these electrical enhancements rapidly induce band-to-band tunneling (BTBT) transport habits and induce a pointy band bending, which improves gap extraction effectivity.”
The researchers attribute the development in cell effectivity to the implementation of p-nc-Si:H together with a modified TCO, which they are saying enormously reduces the cell’s contact resistance. “The entire sequence resistance of the photo voltaic cell is decreased from the unique 0.37 to 0.2 Ω cm2which gives a report fill issue for a single-junction silicon photo voltaic cell,” they stated.
The analysis group contains scientists from Delft College of Expertisewhich not too long ago developed new passivating contacts (CSPCs) fabricated from polysilicon and silicon monoxide (poly-SiOx) and China’s Solar Yat-sen College, which not too long ago constructed a perovskite photo voltaic cell based mostly on a nitrogen-doped titanium oxide (TiOxNy) electron transport layer that achieves the report fill issue.
Final September, Longi stated it had achieved an effectivity of 26.12% for a gallium-doped, p-type heterojunction (HJT) photo voltaic cell based mostly on an M6 wafer. The corporate additionally achieved an effectivity of 25.47% for a similar photo voltaic cell in March.
As well as, the Chinese language producer recorded an effectivity of 26.5% for an n-type HJT photo voltaic cell in June and a 25.19% score for its p-type TOPCon photo voltaic cell in July 2021. June 2021, achieved a 25.21% effectivity score. for an n-type TOPCon PV cell.
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